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RUR040N02
Transistors
Electrical characteristics (Ta=25 ° C)
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
± 10
Unit
μ A
Conditions
V GS = ± 10V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
20
?
?
V
I D = 1mA, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
I DSS
V GS (th)
R DS (on) ?
?
0.3
?
?
?
?
?
?
25
33
42
55
1
1.3
35
46
59
110
μ A
V
m ?
m ?
m ?
m ?
V DS = 20V, V GS =0V
V DS = 10V, I D = 1mA
I D = 4.0A, V GS = 4.5V
I D = 4.0A, V GS = 2.5V
I D = 2.0A, V GS = 1.8V
I D = 0.8A, V GS = 1.5V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Y fs
C iss
C oss
C rss
t d (on)
t r
t d (off)
t f
?
?
?
?
?
5.0
?
?
?
?
?
?
?
?
680
150
90
10
30
50
60
?
?
?
?
?
?
?
?
S
pF
pF
pF
ns
ns
ns
ns
V DS = 10V, I D = 4.0A
V DS = 10V
V GS =0V
f=1MHz
I D = 2.0A, V DD 10V
V GS = 4.5V
R L 5 ? , R G =10 ?
Total gate charge
Gate-source charge
Q g
Q gs
?
?
?
?
8
1.8
?
?
nC
nC
I D = 4.0A, V DD
V GS = 4.5V
10V
Gate-drain charge
Q gd
?
?
1.3
?
nC
R L 2.5 ? , R G =10 ?
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V SD
?
?
?
1.2
V
I S = 0.8A, V GS =0V
? Pulsed
2/4
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